Logic Functionality and Circuit Design of In2Se3-Based Split-Gate Ferroelectric Field-Effect Transistor for Zero-Trust Applications
A.Ram, C.Marchand, S. B.Masood, et al. “Logic Functionality and Circuit Design of In2Se3-Based Split-Gate Ferroelectric Field-Effect Transistor for Zero-Trust Applications.” Advanced Electronic Materials (2026): e00871. https://doi.org/10.1002/aelm.202500871
