A.Ram, C.Marchand, S. B.Masood, et al. “Logic Functionality and Circuit Design of In2Se3-Based Split-Gate Ferroelectric Field-Effect Transistor for Zero-Trust Applications.” Advanced Electronic Materials (2026): e00871. https://doi.org/10.1002/aelm.202500871
Abstract
Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α-In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior. Here, we present α-In2Se3-based ferroelectric semiconductor field-effect transistors (FeS-FETs) with a split-gate architecture that enables multifunctional logic operations. Operating in the high equivalent oxide thickness (EOT) regime, the devices exhibit a clockwise transfer hysteresis with a wide memory window and an on/off ratio above 104. The split-gate design enables independent control over channel segments, allowing implementation of volatile NAND logic and reconfigurable Fe-NAND/Fe-NOR operations. In addition, multilevel conductance states and programmable threshold-voltage shifts are demonstrated, further extending the device functionality toward multi-valued and analog computing. Circuit simulations using a FeS-FET equivalent model show that two devices are connected in parallel, and all elementary Boolean logic functions can be achieved. Notably, the programmed states retain for ∼102 s, a balanced retention window ideally suited for applications in security-focused “zero-trust” environments where temporary data storage and self-erasure are desired.
